Silicon-germanium-carbon compositions and processes thereof

Details Silicon-germanium-carbon compositions and processes thereof Silicon-germanium-carbon compositions and processes thereof

C - Chemistry, Metallurgy

30

B

C30B 29/02 (2006.01) C30B 33/08 (2006.01) H01L 21/20 (2006.01) H01L 21/3213 (2006.01) H01L 29/161 (2006.01)

Patent

CA 2204394

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si-Ge-C), methods for growing Si-Ge-C epitaxial layer(s) on a substrate, etchants especially suitable for Si-Ge-C etch-stops, and novel methods of use for Si-Ge-C compositions are provided. In particular, the invention relates to Si-Ge-C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

Compositions à base de silicium-germanium qui comprennent du silicium, du germanium et du carbone (Si-Ge-C), procédés permettant de tirer une ou plusieurs couches épitaxiales (42) Si-Ge-C sur un substrat (32), réactifs d'attaque particulièrement adaptés aux couches d'arrêt (42) d'attaque Si-Ge-C et nouveaux procédés d'utilisation de compositions Si-Ge-C. La présente invention concerne en particulier des compositions Si-Ge-C utilisables spécialement en tant que couches d'arrêt d'attaque, des processus associés et des réactifs d'attaque utiles pour la fabrication en microélectronique et en nanotechnologie.

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