Silicon germanium photodetector

Details Silicon germanium photodetector Silicon germanium photodetector

H - Electricity

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345/24

H01L 31/10 (2006.01) H01L 31/0352 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1261451

SILICON GERMANIUM PHOTODETECTOR Abstract This invention embodies a photodector comprising a first cladding layer of silicon (e.g. 3) having a first conductivity type, a second cladding layer (e.g. 7) having a second conductivity type and an interleaved region (e.g. 5) positioned between the two cladding layers, the interleaved region comprising alternating layers of GexSil-x and GeySil-x wherein x is greater than 0.0 and y and less than or equal to 1.0, and y is greater than or equal to 0.0 and less than 1Ø (FIG. 1).

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