Silicon heating element

Details Silicon heating element Silicon heating element

H - Electricity

05

B

H05B 3/14 (2006.01) H05B 3/26 (2006.01)

Patent

CA 2047193

2047193 9110336 PCTABS00006 A silicon heating element comprises an electrically isolated support (A) of high thermal conductivity - preferably made of beryllium oxide or of aluminium nitride - bearing a silicon layer (B) and electric contacts (C). The silicon layer (B) consists of polycrystalline or amorphus silicon which is doped by semiconducting dopants of the p- or n-type, preferably in a concentration higher than 1018/ccm. The contacts are highly temperature resistant and alloyed to the silicon layer (B). Alternatively the contacts are composed of a contact layer (C') of refractory metal being in contact with the electrically isolated support (A) and of a second temperature resistant material (C'') alloyed onto the contact layer (C'). The silicon heating element is produced by laying a layer (B) of polycristalline or amorphous silicon onto an electrically isolated support (A) of high thermal conductivity. It is deposited as a thin layer (B) and is doped with semiconducting dopants of the p- or n-type either during or after this deposition. Electric contacts (C) are then connected to the silicon layer (B). The silicon heating element can also be used as a temperature sensor.

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