Silicon ion implanted semiconductor device

Details Silicon ion implanted semiconductor device Silicon ion implanted semiconductor device

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H01L 29/78 (2006.01) H01L 21/02 (2006.01) H01L 21/8247 (2006.01) H01L 27/11 (2006.01) H01L 29/45 (2006.01) H01L 29/51 (2006.01) H01L 29/792 (2006.01) H01L 29/86 (2006.01)

Patent

CA 1276314

ABSTRACT . SILICON IMPLANTED SEMICONDUCTOR DEVICE A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implanted into the region under the conductive layer. Depending upon the thickness of the region and the concentration of implanted silicon ions, the device can function as an IGFET memory device or a vertical resistor between the conductive layer and the substrate.

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