Silicon layer highly sensitive to oxygen and method for...

Details Silicon layer highly sensitive to oxygen and method for... Silicon layer highly sensitive to oxygen and method for...

H - Electricity

01

L

H01L 29/04 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2392445

The invention concerns a layer (2) formed on a substrate, for example a SiC layer, having a 4x3 surface structure. The process for obtaining such a layer consists in depositing silicon substantially evenly on a surface of the substrate. The invention is useful in particular in microelectronics.

Cette couche (2), formée sur un substrat (4) par exemple en SiC, a une structure de surface 4×3. Pour l'obtenir, on dépose de façon sensiblement uniforme du silicium sur une surface du substrat. L'invention s'applique par exemple en microélec-tronique.

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