C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/325, 23/389,
C01B 33/02 (2006.01) B01J 19/00 (2006.01) C23C 14/14 (2006.01) C30B 13/22 (2006.01) C30B 15/10 (2006.01) C30B 15/14 (2006.01) C30B 23/02 (2006.01) C30B 23/06 (2006.01) C30B 30/00 (2006.01) H05B 7/20 (2006.01)
Patent
CA 1240482
ABSTRACT OF THE DISCLOSURE A high-purity method of forming a silicon melt utilizes a solid silicon body which is drilled to provide bores into which electrodes are inserted. The electrodes preferably are also of silicon and an electric arc-current is passed through the electrodes to generate an arc which melts out the body to define a cavity therein containing the melt. The melt may be used for the drawing of a silicon bar or for the deposition of silicon in vapor form from the melt upon a substrate in a vacuum chamber.
484991
Baker Harold C.
Wedtech Corp.
LandOfFree
Silicon melting and evaporation method and apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon melting and evaporation method and apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon melting and evaporation method and apparatus for... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1333253