Silicon nanoparticle field effect transistor and transistor...

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H01L 29/06 (2006.01) G11C 11/40 (2006.01) H01L 29/78 (2006.01) H01L 29/788 (2006.01)

Patent

CA 2393962

A silicon nanoparticle (18) transistor (30, 32, 34) and transistor memory device. The transistor of the invention has silicon nanoparticles (18), dimensioned on the order of 1nm, in a gate area (34) of a field effect transistor (30, 32, 34). The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

L'invention concerne un transistor (30, 32, 34) à nanoparticules (18) de silicium ainsi qu'un dispositif de mémoire à transistor. Le transistor de l'invention comprend des nanoparticules de silicium (18) de l'ordre de 1 nm dans une zone de grille (34) d'un transistor (30, 32, 34) à effet de champ. Le transistor résultant est un transistor dont le fonctionnement est commandé par un flux électronique unique. Cette nouvelle structure de transistor peut fonctionner à température ambiante à l'aide d'un rayonnement, lequel est dirigé vers les nanoparticules de silicium de manière à créer des orifices nécessaires dans la structure quantique pour le flux d'un électron. Le transistor de cette invention constitue également la base d'un dispositif de mémoire. Ce dispositif est un dispositif de mémoire flash destiné à stocker une charge électrique à la place des effets magnétiques.

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