Silicon nitride ceramics containing crystallized grain...

Details Silicon nitride ceramics containing crystallized grain... Silicon nitride ceramics containing crystallized grain...

C - Chemistry, Metallurgy

04

B

C04B 35/58 (2006.01) C04B 35/16 (2006.01) C04B 35/593 (2006.01) C04B 35/64 (2006.01)

Patent

CA 2087655

Matsumoto Case 2 SILICON NITRIDE CERAMICS CONTAINING CRYSTALLIZED GRAIN BOUNDARY PHASES Abstract of the Disclosure A silicon nitride ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon nitride, a silicate glass-forming sintering aid and a high metal content transition metal silicide, to a temperature of 1300° to 1800°C under vacuum until a glass forms, oxygen is removed from the glass as SiO gas, and the glass crystallizes. Alternatively, the grain boundaries of a sintered composition comprising silicon nitride, a silicate glass and a high metal content transition metal silicide can be crystallized by heating to at least 1300°C under a vacuum.

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