Silicon nitride nanowhiskers and method of making same

Details Silicon nitride nanowhiskers and method of making same Silicon nitride nanowhiskers and method of making same

C - Chemistry, Metallurgy

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C01B 21/068 (2006.01) C04B 35/81 (2006.01) C30B 25/00 (2006.01) C30B 29/38 (2006.01) C30B 29/62 (2006.01)

Patent

CA 2227615

Silicon nitride nanowhiskers predominantly having diameters substantially less than about 200 nm are disclosed. The nanowhiskers of Si3N4 are produced by reacting gaseous SiO and N2 at elevated temperature and pressure in a reaction zone in the presence of a plurality of disperse carbon nanotubes having a diameter of from 3.5 to 70 nm.

L'invention concerne des nanowhiskers de nitrure de silicium dont la majorité a un diamètre sensiblement inférieur à 200 nm environ. On fabrique ces nanowhiskers de Si3N4 en faisant réagir du SiO à l'état gazeux et du N2 à une température et une pression élevées dans une zone de réaction en présence d'une pluralité de nanotubes de carbone dispersé ayant un diamètre compris entre 3,5 et 70 nm.

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