C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/33
C04B 35/58 (2006.01) C04B 35/584 (2006.01) C04B 35/597 (2006.01)
Patent
CA 1201732
ABSTRACT OF THE DISCLOSURE Silicon nitride sintered bodies having particu- larly excellent strength and creep resistance at high temperature, in which a total amount of MgO and A?2O3 is more than 6% by weight and not more than 30% by weight and a weight ratio of MgO/A?2O3 is 4-19 and the remainder is mainly Si3N4 and at least one of magnesium sialon crystal represented by the general formula Mgx/2Si6-y+x/2A?y-xOyN8-y (0<x?y<8, preferably 0.9?x/y) and forsterite crystal represented by the formula Mg2SiO4 is contained as a second phase in addition to the main crystal of Si3N4, are produced by mixing a raw material powder of silicon nitride containing less than 2% by weight of oxygen with MgO and A?2O3 so that a total amount of MgO and A?2O3 is from 6% by weight to 30% by weight and a weight ratio of MgO/A?2O3 is 4-19, and firing the resulting mixture at a temperature of 1,650-1,850°C in nitrogen or an inert gas atmosphere.
430008
Matsuhiro Keiji
Matsui Minoru
Ngk Insulators Ltd.
Smart & Biggar
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