C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/1
C04B 35/58 (2006.01) C04B 35/584 (2006.01) C04B 35/593 (2006.01)
Patent
CA 1257298
SILICON NITRIDE SINTERED BODIES AND PROCESS FOR MANUFACTURING THE SAME Abstract of the Disclosure A silicon nitride sintered bodies are disclosed, which each comprise not less than 70% by weight of Si3N4 and essentially consist of Si, O, N, and a remainder being at least two kinds of rare earth elements selected from Y, Er, Tm, Yb, and Lu. A ratio of a molar amount of all the rare earth elements contained in the sintered body when calculated as Ln2O3 in which Ln is a rare earth element selected from Y, Er, Tm, Yb and Lu with respect to a molar amount of oxygen when calculated as SiO2 is in a range from 0.4 to 1.3. The amount of oxygen when calculated as SiO2 is obtained by subtracting an amount of oxygen contained in all the Ln2O3 obtained by expressing all the rare earth elements contained in said sintered body as Ln2O3 from an amount of oxygen contained in the sintered body and converting a remaining amount of oxygen into SiO2. Any one of the rare earth elements contained in the sintered body is not more than 95 mol% of the sum of all the rare earth elements contained in the sintered body. An intergranular phase of Si3N4 grains contained in the sintered body is substantially of a crystalline phase and not less than 50% of the crystalline phase of the intergranular phase is a crystalline phase of an apatite structure. A process for manufacturing such silicon nitride sintered bodies is also disclosed.
539412
Soma Takao
Takahashi Tomonori
Ngk Insulators Ltd.
Smart & Biggar
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