C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/1
C04B 35/58 (2006.01) C04B 35/584 (2006.01) C04B 35/597 (2006.01)
Patent
CA 1217506
- 13 - Abstract of the Disclosure A silicion-nitride-sintered mass whose base is prepared from si3N4-rare earth oxide-A?2O3-A?N and whose constituent phases are represented by .alpha.'-Si3N4 and .beta.-Si3N4, wherein the ratio between both phases is set at 0.05-0.7 : 0.95-0.3, or by .alpha.'-Si3N4, .beta.-Si3N4 and Si-rare earth element-A?-O-N, wherein the ratio of the .alpha. '-Si3N4 phase to the whole of all constituent phases is set at 0.01 to 0.7.
451007
Inoue Hiroshi
Komatsu Michiyasu
Komeya Katsutoshi
Tsuge Akihiko
Ridout & Maybee Llp
Tokyo Shibaura Denki Kabushiki Kaisha
LandOfFree
Silicon-nitride-sintered body does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon-nitride-sintered body, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-nitride-sintered body will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1323169