C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/1
C04B 35/58 (2006.01) C04B 35/584 (2006.01) C04B 35/593 (2006.01)
Patent
CA 1223013
Abstract: Silicon nitride sintered body and method for preparing the same There are disclosed a silicon nitride body comprising (A) 0.5 to 25 % by weight of at least one of oxides, nitrides and oxynitrides of rare earth elements consisting of Sc, Y and lanthanide elements; (B) 0.5 to 25 % by weight of at least one of oxides, nitrides and oxynitrides of elements consisting of Be, Mg, Ca, Sr, Ba and Ra in group IIa and/or of nitrides and oxynitrides of elements consisting of B, A1, Ga, In and Tl in group IIIb of the periodic table; and (C) a remainder including Si3N4 and inevitable impurities; provided that the case where a combination of (A) at least one of the oxides of the rare earth element with (B) at least one of the oxides of the elements in group IIa and a combination of (A) at least one of the oxides of the rare earth element with (B) at least one of the oxides of the elements in group IIa and nitrides of the elements in group of IIa are excluded, and a method for preparing the same. The silicon nitride sintered body of this invention has excellent wear resistance and toughness, and are suitable for an industrial production of materials for heat resistant structures.
452515
Fukuhara Mikio
Maekawa Yoshitaka
Marks & Clerk
Toshiba Tungaloy Co. Ltd.
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