Silicon nitride sintered body and method of producing the same

Details Silicon nitride sintered body and method of producing the same Silicon nitride sintered body and method of producing the same

C - Chemistry, Metallurgy

04

B

261/1

C04B 35/58 (2006.01) C04B 35/50 (2006.01) C04B 35/584 (2006.01) C04B 35/593 (2006.01)

Patent

CA 2036010

A dense silicon nitride sintered body having an excel- lent strength at high temperatures as well as at room temperature and a method of preparing it are disclosed. The body consists essentially of Si3N4 as a main component, the remainder being at least one rare earth element compound, SiC and at least one compound of tungsten or molybdenum. The grain boundary phase of Si3N4 grains consists substantially of crystal phases. The body is prepared by combining Si3N4 powder, a rare earth element oxide powder, and SiC powder, and a powder of at least one compound of W or Mo, forming the raw material into a shaped body, and firing the shaped body in N2 atmosphere to substantially crystal- lize the grain boundary phase of the Si3N4 grains.

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