C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/58 (2006.01) C04B 35/593 (2006.01) C04B 35/64 (2006.01)
Patent
CA 2058151
Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage a crystallization of 93% or more and a mean grain diameter of 0.7 µm or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500 to 1700 °C; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si3N4 (including .alpha.'-sialon) crystal phase to a .beta.-Si3N4 (including .beta.'-sialon) crystal phase ranges from 1 : 3 to 1 : 8 in terms of the peak intensity ratio in X-ray diffraction.
Awatsu Tomoyuki
Matsunuma Kenji
Miyake Masaya
Nishioka Takao
Sogabe Koichi
Goudreau Gage Dubuc
Sumitomo Electric Industries Ltd.
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