C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/58 (2006.01) C04B 35/593 (2006.01) C04B 35/597 (2006.01)
Patent
CA 2060241
The present invention relates to a silicon nitride sintered body [wherein the composition of Si3N4-first aid (Y2O3 + MgO)-second aid (at least one of Al2O3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.- Si3N4 and B'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700°C so that the relative density reaches 96% or more, and the precipitation ratio of the a-Si3N4 crystal phases to the B'-sialon crystal phase in the sintered body is in the range of from 40 : 60 to 80 : 20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700°C so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.
Matsunuma Kenji
Miyake Masaya
Nishioka Takao
Yamakawa Akira
Yamamoto Takehisa
Goudreau Gage Dubuc
Sumitomo Electric Industries Ltd.
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