Silicon-on-porous-silicon, method of production and material

Details Silicon-on-porous-silicon, method of production and material Silicon-on-porous-silicon, method of production and material

H - Electricity

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H01L 21/76 (2006.01) H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 21/321 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2094237

2094237 9209104 PCTABS00013 The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI C-MOS devices and bipolar transistors. Alternatively, the method of the invention can be used for the manufacture of e.g. pyroelectric devices.

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