Silicon on sapphire laser process

Details Silicon on sapphire laser process Silicon on sapphire laser process

H - Electricity

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356/176

H01L 21/263 (2006.01) B05D 3/06 (2006.01) H01L 21/268 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1152229

SILICON ON SAPPHIRE LASER PROCESS ABSTRACT A beam of radiant energy such as a laser beam is applied to an epitaxial silicon island on a silicon on sapphire device before formation of overlying layers of oxide and metal. The energy beam changes the crystal structure of the epitaxial silicon island to increase the mobility of carriers in the silicon island, improving the speed of transistors formed on the silicon island. The energy beam also causes the material in the silicon island edge to reflow, causing a reduction in the slope of the edge face of the silicon island edge, and a smoothing of the surface of the face, resulting in improved aluminum step coverage and elimination of a V-shaped groove in the first insulation layer at the bottom corner edge of the island, thereby increasing processing yield.

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