H - Electricity – 01 – H
Patent
H - Electricity
01
H
H01H 35/34 (2006.01) G01L 9/00 (2006.01) G01L 9/12 (2006.01) G01P 15/08 (2006.01) H01H 35/14 (2006.01) H01H 37/00 (2006.01)
Patent
CA 2074241
ABSTRACT An improved diaphragm sensor employs silicon-on-silicon technology and has monolithic integrated signal conditioning circuitry. The support circuitry minimizes the effects of stray capacitance and may be configured to provide either analog or digital output to external terminals. It has a wide band of linearity and is particularly useful for accurately measuring pressure less than 0.5 PSI. The sensor is constructed by joining a silicon top plate having a mechanical pressure stop, a reduced thickness silicon diaphragm and a back plate having CMOS circuitry thereon. These components are bonded together by eutectric soldering.
Graber Warren S.
Loeppert Peter V.
Monolithic Sensors Inc.
Sim & Mcburney
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