Silicon oxynitride passivated rare earth activated...

H - Electricity – 05 – B

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H05B 33/14 (2006.01) C09K 11/77 (2006.01) C09K 11/84 (2006.01) C09K 11/88 (2006.01) H05B 33/10 (2006.01) H05B 33/22 (2006.01)

Patent

CA 2495771

A novel structure is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a silicon oxynitride layer provided directly adjacent the top and/or bottom of the phosphor thin film layer, wherein said silicon oxynitride layer comprises a composition of Si3NxOyHz where 2 <= x <= 4,0 < y <= 2 and 0 <= z <= 1. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.

L'invention concerne une nouvelle structure destinée à améliorer la stabilité de fonctionnement de luminophores à base de thioaluminate utilisés dans des dispositifs d'affichage électroluminescents diélectriques à couche épaisse. Cette nouvelle structure comprend une couche mince de phosphore de thioaluminate alcalino-terro activé par des terres rares, ainsi qu'une couche d'oxynitrure de silicium disposée directement sur et/ou sous ladite couche mince de phosphore. Selon l'invention, ladite couche d'oxynitrure de silicium comprend une composition de formule Si¿3?N¿x?O¿y?H¿z? dans laquelle 2 = x = 4, 0 < y = 2 et 0 = z = 1. Cette invention peut en particulier être utilisée pour des luminophores se trouvant dans des dispositifs d'affichage électroluminescents contenant des couches diélectriques épaisses qui sont soumises à des températures de traitement élevées pour former et activer les couches de phosphore.

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