Silicon-rich nickel-silicide ohmic contacts for sic...

H - Electricity – 01 – L

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H01L 21/28 (2006.01) H01L 21/18 (2006.01) H01L 29/45 (2006.01)

Patent

CA 2572959

A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

L'invention concerne un procédé de production d'un contact ohmique et la structure de contact ohmique obtenue. Le procédé comporte les étapes consistant à: former par dépôt un film de nickel et de silicium sur une surface de carbure de silicium, à une température inférieure à la température à laquelle ces éléments réagissent avec le carbure de silicium, et dans des proportions respectives telles que la fraction atomique du silicium dans le film déposé est supérieure à celle du nickel; et chauffer le film déposé de nickel et de silicium à une température à laquelle se forment des composés nickel-silicium, la fraction atomique du silicium étant supérieure à celle du nickel, ladite température étant toutefois inférieure à celle à laquelle ces éléments réagissent avec le carbure de silicium. Le procédé comporte en outre l'étape consistant à recuire le composé nickel-silicium à une température supérieure à la température de chauffe du film déposé, dans une région du diagramme d'équilibre où le carbone libre n'existe pas.

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