H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/84 (2006.01) G01L 1/18 (2006.01) G01L 1/22 (2006.01)
Patent
CA 2380310
A semiconductor strain gage (10) having an electrically resistive substrate layer (12) and a layer of electrically conductive silicon (14) supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer (12) or a diffused or ion-implanted layer formed on the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage (10) attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.
L'invention concerne une jauge dynamométrique semi-conductrice (10) pourvue d'une couche substrat (12) électriquement résistante et d'une couche de silicium (14) électriquement conductrice portée par la couche de substrat. La couche de silicium peut être une couche de silicium épitaxiale croissant sur une surface de la couche de substrat (12) ou une couche diffusée ou à implantation ionique formée sur la surface de la couche de substrat. Elle concerne en outre un dispositif de détection et de mesurage de forces comprenant un élément sensible aux forces et la jauge dynamométrique semi-conductrice (10) fixée audit élément, ladite jauge mesurant les forces appliquées à l'élément sensible aux forces.
Measurement Specialties Inc.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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