Silicon thin film and method of producing the same

Details Silicon thin film and method of producing the same Silicon thin film and method of producing the same

H - Electricity

01

L

345/22, 356/90

H01L 21/20 (2006.01) C23C 16/24 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1175583

ABSTRACT OF THE DISCLOSURE Silicon thin film is composed of primarily silicon atoms, at least one element selected from a group including fluorine, chlorine, bromine, iodine and hydrogen, and impurity element, wherein microcrystalline grains are interspersed in the amorphous layer. The thin film is produced by a method of pro- ducing a silicon thin film on a substrate under the plasma atmosphere using as a raw material any one of silane (SiH4) or halogenated silane (SiH0-3X4-1) wherein X represents halogen element, or a combination of two or more thereof, and a dopant gas mixed with the raw mater- ial. The method comprises steps of; diluting said mixed gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the mixed gas higher than 1:1 in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm2.

387901

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