G - Physics – 01 – K
Patent
G - Physics
01
K
73/52
G01K 11/12 (2006.01)
Patent
CA 2030572
ABSTRACT OF THE INVENTION A method for the measuring of semiconductor materials at elevated temperatures. The method comprises generating a first beam of electromagnetic energy with a preselected wavelength, directing the beam onto a semiconductor material having a known thickness, measuring the intensity of the first beam after transmittance through the semiconductor material to generate a first signal which is representative of the intensity of the transmitted beam, and calculating the temperature of the semiconductor material as a function of the first signal and the thickness of the material. The method makes use of a temperature measuring apparatus which basically comprises a means for generating the first beam of electromagnetic energy, a photon detection means for measuring the intensity of the beam and a display means for indicating the temperature of the semiconductor wafer.
Garone Peter M.
Schwartz Peter V.
Sturm James C.
Garone Peter M.
Mcfadden Fincham
Research Corporation Technologies Inc.
Schwartz Peter V.
Sturm James C.
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