C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 33/113 (2006.01) C01B 33/02 (2006.01) C30B 15/00 (2006.01) C30B 15/34 (2006.01) H01L 31/04 (2006.01)
Patent
CA 2311618
The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.
Breitenstein Otwin
Hassler Christian
Hofs Hans-Ulrich
Koch Wolfgang
Thurm Siegfried
Aktiengesellschaft Bayer
Fetherstonhaugh & Co.
LandOfFree
Silicon with structured oxygen doping, its production and use does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon with structured oxygen doping, its production and use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon with structured oxygen doping, its production and use will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1875951