Silicon with structured oxygen doping, its production and use

C - Chemistry – Metallurgy – 01 – B

Patent

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Details

C01B 33/113 (2006.01) C01B 33/02 (2006.01) C30B 15/00 (2006.01) C30B 15/34 (2006.01) H01L 31/04 (2006.01)

Patent

CA 2311618

The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.

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