Silver-containing p-type semiconductor

H - Electricity – 01 – L

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H01L 35/16 (2006.01)

Patent

CA 2578214

A thermoelectric composition comprises a material represented by the general formula (AgaX1-a)1~x (SnbPbl-b)m M~1-yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently > 0 and <=1; x and y are independently > 0 and < 1; and 2 <=m <=30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

La présente invention concerne une composition thermoélectrique comprenant un matériau représenté par la formule générale (AgaX1-a)1±x (SnbPbl-b)m M'1-yQ2+m dans laquelle X est Na, K, ou une combinaison de Na et K dans n'importe quelle proportion; M' est un élément trivalent choisi dans le groupe constitué de Sb, Bi, éléments lanthanides, et certaines de leurs combinaisons; Q es un élément chalcogénure choisi dans le groupe constitué de S, Te, Se et certaines de leurs combinaisons; a et b sont indépendamment > 0 et =1; x et y sont indépendamment > 0 et < 1; avec 2 =m =30. Ces compositions qui présentent un coefficient ZT pouvant atteindre au moins 1,4, conviennent comme semi-conducteurs dopés P dans des dispositifs thermoélectriques.

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