C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C30B 29/04 (2006.01) C30B 33/00 (2006.01)
Patent
CA 2496710
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
L'invention concerne un procédé d'élaboration d'une plaque à surface importante d'un diamant à cristal unique provenant d'un diamant <= CVD >= qui a cru sur un substrat pratiquement exempt de défauts superficiels au moyen du procédé CVD. Ce diamant de croissance CVD homoépitaxial et le substrat sont coupés transversalement par rapport à la surface du substrat, sur lequel la croissance du diamant a pris place afin de produire ladite plaque à surface importante du diamant <= CVD >= à cristal unique.
Martineau Philip Maurice
Scarsbrook Geoffrey Alan
Twitchen Daniel James
Element Six Limited
Gowling Lafleur Henderson Llp
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