Single-crystal diamond

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 29/04 (2006.01)

Patent

CA 2549283

A single-crystal diamond grown according to a vapor-phase synthesizing method characterized in that a phase difference between two linearly polarized lights orthogonal to each other which as a result of irradiating of one main plane of crystal with a linearly polarized radiation regarded as being synthesized from two linearly polarized lights orthogonal to each other, have been emitted from the opposite main plane is a maximum of 50 nm or less per 100 µm of crystal thickness throughout the crystal. This single-crystal diamond is an unprecedented single-crystal diamond of large size and high quality that has properties extremely desired in semiconductor device substrates and optical part applications requiring low strain.

La présente invention concerne un diamant monocristallin fabriqué selon un procédé de production en phase vapeur caractérisé en ce qu~une différence de phase entre deux lumières polarisées linéairement et orthogonales l~une par rapport à l~autre qui, comme résultat de l~irradiation d'un plan principal du cristal avec une irradiation polarisée linéairement considérée comme étant synthétisée à partir de deux lumières polarisées linéairement et orthogonales l~une par rapport l~autre, ont été émises à partir du plan principal opposé, mesure un maximum de 50 nm ou moins par 100 µm d~épaisseur de cristaux partout dans le cristal. Le diamant monocristallin de l~invention est un diamant monocristallin sans précédent d~une grande dimension et de haute qualité qui possède des propriétés extrêmement souhaitées dans les substrats de dispositifs semi-conducteurs et dans les applications de pièces optiques qui nécessitent une faible contrainte.

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