C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.6
C30B 15/00 (2006.01) C30B 29/40 (2006.01)
Patent
CA 1242375
ABSTRACT OF THE DISCLOSURE Novel single crystals of a compound semiconductor of Groups III-V with a low dislocation density are provided herein. More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One impurity, or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic property and the carrier density of the semiconductor. The isoelectronic impurity does not change the electronic property, but it has an effect of impurity hardening. The impurity atom forms a covalent bond with a host atom. The bond length between an impurity and a host atom differs from the standard bond between host atoms. Although the real bond lengths between an impurity atom and a host atom cannot be measured, the difference of bond lengths generate dislocation or other lattice defects of crystal. The real bond length "A" between an impurity and a host atom in an impurity-doped crystal may be surmised from the corresponding bond length "a" or "b" in a two-component crystal consisting of the impurity element and the host element. Definite and measurable bond lengths "a" or "b" replace the real unknown bond length "A". The impurity whose replaced bond length "a" or "b" is larger than the standard bond length "a0" between host atoms is called an over-impurity. The impurity whose replaced bond length "a" or "b" is smaller than "a0" is called an under-impurity. At least one under-impurity and at least one over-impurity must be doped. The arithmetic average "a" of the Abstract of the Disclosure (page 2) bond lengths between the impurity atoms and the host atoms should not differ from "a?" by more than 1%. Size effects of under- and over-impurities compensate each other in the double-impurity- doped crystal. Dislocations or other lattice defects are reduced.
477430
Morioka Mikio
Shimizu Atsushi
Borden Ladner Gervais Llp
Sumitomo Electric Industries Ltd.
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