Single crystal sic and a method of producing the same

Details Single crystal sic and a method of producing the same Single crystal sic and a method of producing the same

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 1/00 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01)

Patent

CA 2253136

The single crystal SiC according to the invention is produced in the following manner. Two complexes M in each of which a polycrystalline film 2 of .beta.-SiC (or .alpha.-SiC) is grown on the surface of a single crystal .alpha.-SiC substrate 1 by thermochemical deposition, and the surface 2a of the polycrystalline film 2 is ground so that the smoothness has surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces 2a', at a high temperature of 2,000°C or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films 2 of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal .alpha.-SiC substrates 1. Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity.

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