Single crystal sic and a method of producing the same

Details Single crystal sic and a method of producing the same Single crystal sic and a method of producing the same

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 33/00 (2006.01)

Patent

CA 2263352

A .beta.-SiC polycrystal plate (2) having a thickness of not less than 10 µm is formed on the surface of an .alpha.-SiC single crystal substrate (1) by PVD or thermal CVD to prepare a composite (M), which is heat-treated in the temperature range of from 650 to 2400 °C to transform the polycrystal of the .beta.-SiC polycrystal plate (2) into a single crystal, permitting a single crystal aligned in the same orientation as the crystal axis of the .alpha.-SiC single crystal substrate (1) to be grown. This process serves to easily and efficiently prepare a high-quality single crystal of SiC substantially free from a micropipe defect and defects caused by the influence of the micropipe defect.

On crée une plaque de polycristal beta -Sic (2) dont l'épaisseur n'est pas inférieure à 10 mu m, sur la surface d'un substrat de monocristal alpha -SiC (1) par dépôt chimique en phase vapeur ou dépôt thermique (PVD ou CVD) afin de préparer un composite (M) qu'on soumet à un traitement thermique dans une plage de températures de 650 à 2400 DEG C, de manière à transformer le monocristal de la plaque de polycristal beta -SiC (2) en un monocristal, ce qui permet d'obtenir un monocristal aligné selon la même orientation que l'axe du cristal du substrat de monocristal alpha -Sic (1). Ce procédé permet de préparer de façon simple et efficace un monocristal de qualité supérieure de SiC sensiblement exempt de défaut constitué par des canaux microscopiques ou de défauts provoqués par ce dernier.

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