Single crystal sic and process for preparing the same

Details Single crystal sic and process for preparing the same Single crystal sic and process for preparing the same

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 1/00 (2006.01)

Patent

CA 2269709

A .beta.-SiC polycrystal plate (4) is formed by thermal CVD and stacked onto a unidirectionally regulated crystal orientation face (2a) of a plurality of sheetlike .alpha.-SiC single crystal pieces (2) bonded on one another in an intimately contacted state to prepare a composite (M). The composite (M) is heat-treated in the temperature range of from 1850 to 2400 ~C to integrally grow a single crystal aligned in the same orientation as the crystal axis of each .alpha.-SiC single crystal piece (2) from the crystal orientation face (2a) of the .alpha.-SiC single crystal piece (2) towards the .beta.-SiC polycrystal plate (4). Thus, a high-quality single crystal SiC substantially free from crystal nuclei, impurities and micropipe defects in the interface can be easily prepared with good efficiency.

On forme une plaque de SiC .beta. polycristallin (4) par dépôt thermochimique en phase vapeur et on la dispose sur une face d'orientation (2a), constituée de cristaux alignés dans une seule direction, d'une pluralité d'éléments monocristallins de SiC .alpha. (2) plans, disposés les uns contre les autres en contact mutuel étroit, de façon à préparer un composite (M). On traite ce dernier thermiquement, dans une plage de températures allant de 1850 à 2400 ·C, de façon à faire pousser d'une seule pièce un monocristal aligné selon l'axe du cristal de chaque élément monocristallin de SiC .alpha. (2) depuis la face d'orientation (2a) desdits éléments monocristallins (2) vers la plaque de SiC .beta. polycristallin (4). On peut préparer ainsi facilement et avec un bon rendement du SiC monocristallin de grande qualité, dont l'interface est sensiblement dépourvue de cristaux primaires, d'impuretés et de micro-canaux.

Affiliated with

Also associated with

Rating

Single crystal sic and process for preparing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single crystal sic and process for preparing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal sic and process for preparing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1730085