Single crystal sic and process for preparing the same

Details Single crystal sic and process for preparing the same Single crystal sic and process for preparing the same

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 1/00 (2006.01) C30B 33/00 (2006.01)

Patent

CA 2263339

A .beta.-SiC polycrystal plate (2) is laminated onto the surface of an .alpha.- SiC single crystal substrate (1) in an intimately contacted state through a ground surface, or alternatively may be laminated in a layer form by thermal CVD onto the surface of an .alpha.-SiC single crystal substrate (1) to form a composite (M), which is heat-treated in the temperature range of from 1850 to 2400 ~C to transform the polycrystal of the .beta.-SiC polycrystal plate (2) into a single crystal, permitting a single crystal aligned in the same orientation as the crystal axis of the .alpha.-SiC single crystal substrate (1) to be grown. This process serves to easily and efficiently prepare a large high-quality single crystal of SiC substantially free from a micropipe defect, a lattice defect, a grain boundary formed by the intrusion of impurities and the like.

Plaque polycristalline (2) .beta.-SiC plaquée sur la surface d'un substrat (1) monocristallin .alpha.-SiC et en contact étroit avec ce dernier par une surface inférieure, ou qui est alternativement plaquée sous forme de couche par dépôt chimique thermique en phase vapeur sur la surface d'un substrat (1) monocristallin .alpha.-SiC pour former un composite (M) qui est traité thermiquement dans une plage de température allant de 1850 à 2400 ·C pour transformer le polycristal de la plaque polycristalline (2) .beta.-SiC en un monocristal, ce qui permet de faire pousser un monocristal aligné dans le même sens que l'axe cristallin du substrat (1) monocristallin .alpha.-SiC. Ledit procédé sert à préparer de manière facile et efficace un grand monocristal de SiC de haute qualité pratiquement exempt de défauts de type microconduits, discontinuité, limite de grain, formés par l'intrusion d'impuretés, etc.

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