Single mask diffusion process

Details Single mask diffusion process Single mask diffusion process

H - Electricity

01

L

356/178

H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 1198227

SINGLE MASK DIFFUSION PROCESS ABSTRACT A unique fabrication method allows the formation of regions of opposite conductivity types in a semiconductor substrate 100 utilizing a single masking step. A first mask is formed on the surface of the semiconductor substrate and patterned to define the regions (110) which are to be doped to a first conductivity type. Subsequent to the doping of these first regions, a protective layer (111) is formed over these first regions. The mask is then removed, thus exposing the regions (112) which are to be doped to the second conductivity type opposite to said first con- ductivity type. These exposed regions are then doped to said opposite conductivity type, with the first regions which have been doped to said first conductivity type protected by said protective layer.

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