Single transverse mode operation in double heterostructure...

Details Single transverse mode operation in double heterostructure... Single transverse mode operation in double heterostructure...

H - Electricity

01

S

345/33

H01S 5/22 (2006.01)

Patent

CA 1072666

Abstract of the Disclosure In single transverse mode semiconductor lasers, a semiconductor laser which comprises an optical confinement semiconductor layer having a refractive index of n3, an active layer of an optical waveguide having a refractive index of n1 and formed on said semiconductor layer, a buffer layer having a refractive index of n2 and formed on said active layer, a mode controlling striped semiconductor layer having a refractive index of n6 and formed on said buffer layer and opposing contacts, and is controllable in the transverse mode in the relations of n6 ? n2 < n1 and n3 < n1.

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