Sintered alpha silicon carbide body having equiaxed...

Details Sintered alpha silicon carbide body having equiaxed... Sintered alpha silicon carbide body having equiaxed...

C - Chemistry, Metallurgy

04

B

25/133, 261/6

C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/64 (2006.01)

Patent

CA 1332065

SINTERED ALPHA SILICON CARBIDE CERAMIC BODY HAVING EQUIAXED MICROSTRUCTURE Abstract of the Disclosure Pressureless sintered silicon carbide ceramic bodies, having an equiaxed microstructure and an alpha crystalline habit can be produced by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900°C to about 2250°C, depending on the sintering atmosphere, under conditions such that a coating of carbon source is maintained on the finely divided silicon carbide, and sufficient boron is maintained within the shaped body during firing. Boron can be maintained within the shaped body by various techniques, such as the use of a "seasoned boat" or graphite container for the body being sintered, which has been saturated with boron by exposure to boron at or about the temperature of sintering. There is also disclosed a process for producing a sintered silicon carbide ceramic body, with or without the equiaxed crystal microstructure, from silicon carbide powders of alpha or beta crystal structure, or amorphous noncrystalline silicon carbide, or mixtures thereof.

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