H - Electricity – 01 – B
Patent
H - Electricity
01
B
H01B 1/02 (2006.01) B32B 7/02 (2006.01) B32B 15/08 (2006.01) C22C 29/12 (2006.01)
Patent
CA 2576359
A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a.beta.-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400) / .beta.-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45 % or less; and has a density of 5.8 g / cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.
Abe Yoshiyuki
Nakayama Tokuyuki
Marks & Clerk
Sumitomo Metal Mining Co. Ltd.
LandOfFree
Sintered body target for transparent conductive film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sintered body target for transparent conductive film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sintered body target for transparent conductive film... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1959286