C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/6
C04B 35/56 (2006.01) C04B 35/565 (2006.01) H01B 3/12 (2006.01) H01L 23/14 (2006.01) H01L 23/15 (2006.01)
Patent
CA 1267915
SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY ABSTRACT Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material an amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body may additionally include other sintering aids such as BN or Al without destruction of desired high electrical resistivity.
518216
Boecker Wolfgang D.g.
Hailey Laurence N.
Mcmurtry Carl H.
Boecker Wolfgang D.g.
Borden Ladner Gervais Llp
Hailey Laurence N.
Mcmurtry Carl H.
The Carborundum Company
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