Sintering of silicon nitride to high density

Details Sintering of silicon nitride to high density Sintering of silicon nitride to high density

C - Chemistry, Metallurgy

04

B

25/128

C04B 35/14 (2006.01) C04B 35/58 (2006.01)

Patent

CA 1157633

RD-11,638 SINTERING OF SILICON NITRIDE TO HIGH DENSITY Abstract of the Disclosure A silicon nitride compact with a density of 95% to 100% is produced by forming a particulate dispersion of silicon nitride and beryllium additive into a compact, firstly sintering the compact from about 1900°C to about 2200°C in nitrogen at superatmospheric pressure sufficient to prevent thermal decom- position of the silicon nitride until the entire outside sur- face of the compact becomes impermeable to nitrogen gas, and then secondly sintering the compact from about 1800°C to about 2200°C under a nitrogen pressure having a value at least twice the first nitrogen sintering pressure.

357099

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