H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/51
H01L 33/00 (2006.01) H01L 27/15 (2006.01)
Patent
CA 1053356
ABSTRACT: A semiconductor device having a p-n junction for emitting incoherent radiation. According to the invention, one or several diodes are obtained in the same semiconductor body and starting from a substrate having a diffused or epitaxial layer of opposite conductivity types, by dividing the layer into one or more active regions by one or more grooves and bounding said islands by a cleavage plane at right angles to the p-n junction. Of the grooves, at least a part extends substantially parallel to the second surface. The body and preferably also the grooves are covered with an insulating layer in which a contact window is provided on the active regions and an electrode layer is provided over substantially the whole surface. As a result, small diodes having a large surface brightness are obtained on a body of handlable dimensions having a flat surface with a comparatively low current consumption. -24-
247133
Tijburg Rudolf P.
Van Dongen Teunis
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