Software programmable logic using spin transfer torque...

H - Electricity – 03 – K

Patent

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H03K 19/177 (2006.01) G11C 11/16 (2006.01)

Patent

CA 2680132

Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

L'invention concerne des systèmes, des circuits et des procédés pour une logique programmable logicielle utilisant une technologie de mémoire vive magnétoristive à couple de transfert par rotation (STT-MRAM). Des éléments de stockage à jonction tunnel magnétique (MTJ) peuvent être formés dans des plans d'entrée et des plans de sortie. Les plans d'entrée et les plans de sortie peuvent être couplés ensemble pour former des réseaux complexes qui permettent la réalisation de fonctions logiques.

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