Soi actuators and microsensors

Details Soi actuators and microsensors Soi actuators and microsensors

G - Physics

01

L

G01L 9/00 (2006.01) G01L 9/06 (2006.01) G01L 9/12 (2006.01)

Patent

CA 2130677

2130677 9318382 PCTABS00025 The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

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