Soi-type thin film transistor and manufacturing method therefor

Details Soi-type thin film transistor and manufacturing method therefor Soi-type thin film transistor and manufacturing method therefor

H - Electricity

01

L

H01L 21/8234 (2006.01) H01L 21/336 (2006.01) H01L 29/786 (2006.01)

Patent

CA 2058513

An SOI-type thin film transistor having: a transparent insulating substrate; a first gate electrode, a first gate insulating film, a semiconductor layer, a second gate electrode and a second gate insulating film which are respectively formed on the transparent insulating substrate, wherein the width of the first gate electrode and that of the second gate electrode are different from each other and as well as the thickness of the first gate insulating film and that of the second gate insulating film are different from each other.

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