Solar cell with epitaxially grown quantum dot material

H - Electricity – 01 – L

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H01L 31/042 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2551123

A monolithic semiconductor photovoltaic solar cell comprising a plurality of subcells disposed in series on an electrically conductive substrate. At least one subcell of the plurality of subcells includes an epitaxially grown self- assembled quantum dot material. The subcells are electrically connected via tunnel junctions. Each of the subcells has an effective bandgap energy. The subcells are disposed in order of increasing effective bangap energy, with the subcell having the lowest effective bandgap energy being closest to the substrate. In certain cases, each subcell is designed to absorb a substantially same amount of solar photons.

La présente invention se rapporte à une cellule solaire photovoltaïque, monolithique, à semi-conducteurs comprenant une pluralité de sous-cellules disposées en séries sur un substrat électriquement conducteur. Au moins une sous-cellule de la pluralité des sous-cellules inclut une matière à points quantiques, auto-assemblés, obtenus par croissance épitaxiale. Les sous-cellules sont raccordées électriquement par l'intermédiaire de jonctions tunnel. Chacune de ces sous-cellules possède une énergie de bande interdite efficace. Les sous-cellules sont disposées par ordre d'énergie de bande interdite efficace croissante, avec la sous-cellule dotée de l'énergie de bande interdite efficace la plus faible qui est la plus proche du substrat. Dans certains cas, chaque sous-cellule est conçue pour absorber une quantité sensiblement identique de photons solaires.

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