Solar cell with integrated protective diode

H - Electricity – 01 – L

Patent

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Details

H01L 31/0304 (2006.01) H01L 27/142 (2006.01) H01L 31/05 (2006.01) H01L 31/068 (2006.01)

Patent

CA 2565911

The invention relates to a solar cell which comprises photoactive semiconductor layers extending between the front and the back contact, and an integrated protective diode (bypass diode). Said protective diode has a polarity opposite to that of the solar cell and is provided at its front with a p-conducting semiconductor layer, and the protective diode is connected to the front contact. The aim of the invention is to provide a highly stable protective diode and to prevent a migration of metal atoms. For this purpose, a tunnel diode (38) extends on the p-conducting semiconductor layer (36) of the protective diode (32), said tunnel diode being connected to the front contact (14) via an n+ layer.

L'invention concerne une cellule solaire qui comporte des couches de semiconducteurs photoactives s'étendant entre le contact avant et le contact arrière, présentant une diode de protection intégrée (diode en parallèle) de polarité opposée à celle de la cellule solaire, ladite diode de protection étant connectée au contact avant. L'objectif de l'invention est d'assurer une stabilité élevée de la diode de protection, notamment d'empêcher une migration d'atomes métalliques. A cet effet, une diode tunnel (38) pouvant être connectée au contact avant (14) par l'intermédiaire d'une couche n+, s'étend sur la couche de semiconducteur de conductivité p (36) de la diode de protection (32).

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