H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22, 148/3.7
H01L 31/04 (2006.01) C01B 33/037 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1115399
ABSTRACT OF THE DISCLOSURE Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p- on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgi- cal silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgi- cal grade silicon in molten aluminum, melting said refined platelets in contact with a silica slag and pulling sili- con boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon-slag melt, a multigrained, directionally solidi- fied refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally-solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.
316086
Kotval Peshotan S.
Strock Harold B.
Hopley William G.
Union Carbide Corporation
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