Solid diffusion sources for phosphorus doping

Details Solid diffusion sources for phosphorus doping Solid diffusion sources for phosphorus doping

C - Chemistry, Metallurgy

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C04B 35/48 (2006.01) C04B 35/447 (2006.01) C04B 35/645 (2006.01) C30B 31/16 (2006.01) H01B 1/06 (2006.01) H01L 21/22 (2006.01) H01L 21/223 (2006.01)

Patent

CA 1059158

Abstract of the Disclosure Solid diffusion sources for phosphorus doping comprise from 5 to 95 percent SiP2O7 with an inert phase of ZrP2O7. While such materials may be hot-pressed, it is preferred to cold-press and sinter to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred compo- sition comprises from 25 to 75 weight percent SiP2O7, the balance ZrP2O7. Fabrication parameters range from about 4000 psi to about 20,000 psi pressure during cold-pressing, and from about 1080°C to about 1190°C firing temperature.

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