C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/08 (2006.01) C30B 25/10 (2006.01) H01L 21/20 (2006.01)
Patent
CA 2114345
Apparatus for performing SPE deposition for growing layers of semiconductive material includes a reaction chamber and means for mounting a substrate wafer and a source wafer in the reaction chamber. The substrate wafer and the source wafer are maintained at a predetermined distance which is less than the mean free path of the reactive species of the oxido-reduction of the semiconductive material. A heater for heating the wafers maintains a temperature difference of 20°C to 40°C between the wafers.
Sepehry-Fard Farid
Swabey Ogilvy Renault
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