Solid phase epitaxy reactor, the most cost effective gaas...

Details Solid phase epitaxy reactor, the most cost effective gaas... Solid phase epitaxy reactor, the most cost effective gaas...

C - Chemistry, Metallurgy

30

B

C30B 25/08 (2006.01) C30B 25/10 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2114345

Apparatus for performing SPE deposition for growing layers of semiconductive material includes a reaction chamber and means for mounting a substrate wafer and a source wafer in the reaction chamber. The substrate wafer and the source wafer are maintained at a predetermined distance which is less than the mean free path of the reactive species of the oxido-reduction of the semiconductive material. A heater for heating the wafers maintains a temperature difference of 20°C to 40°C between the wafers.

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