Solid state devices produced by plasma developing of resists

Details Solid state devices produced by plasma developing of resists Solid state devices produced by plasma developing of resists

G - Physics

03

C

96/266

G03C 5/00 (2006.01) C07F 7/08 (2006.01) C07F 7/18 (2006.01) G03F 7/075 (2006.01) G03F 7/36 (2006.01)

Patent

CA 1175279

- 31 - SOLID STATE DEVICES PRODUCED BY PLASMA DEVELOPING OF RESISTS Abstract of the Disclosure This invention relates to the production of solid state devices by a process which includes at least one pattern delineation step involving dry etching of a negative acting resist film on a substrate. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon- containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers may be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

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