Solid state formation of saphire using a localized energy...

C - Chemistry – Metallurgy – 30 – B

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C30B 29/20 (2006.01) C30B 1/00 (2006.01) C30B 1/08 (2006.01) C30B 13/00 (2006.01) C30B 13/06 (2006.01) C30B 13/16 (2006.01)

Patent

CA 2122387

SOLID STATE FORMATION OF SAPPHIRE USING A LOCALIZED ENERGY SOURCE ABSTRACT OF THE DISCLOSURE Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800°C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.

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